METHOD AND DEVICE FOR PRODUCING SILICON Russian patent published in 2010 - IPC C01B33/02 B01J19/24 

FIELD: chemistry.

SUBSTANCE: invention can be used in chemical industry. The device for producing silicon consists of a housing 5 inside of which there is container 4 with sodium silicofluoride 3. The wall, bottom and/or top of the container 4 are porous. Sodium silicofluoride 3 is in contact with sodium 6 through the porous wall of the container 4. Temperature of sodium silicofluoride 3 is lower than its melting point. Silicon is extracted by passing through 0.012-0.13 mm² cells of the wall of the container 4. Maximum area of the cells of the container 4 is less than minimum area of granules of the initial reagent. Porosity of the wall, bottom and/or top of the container 4 satisfies the relationship: 0.17<ε<1, where ε is porosity of the wall, bottom and/or top of the container.

EFFECT: method and device for producing silicon are disclosed.

3 cl, 2 dwg, 2 ex