POLYMER-COATED SEMICONDUCTOR LIGHT SOURCE Russian patent published in 2010 - IPC H01L33/56 

FIELD: physics.

SUBSTANCE: polymer-coated semiconductor light source includes a semiconductor light-emitting element coated with an optically transparent silicon compound having a dome-like shape. The semiconductor light-emitting element is made in form of a solid body having an upper and a lower base and a lateral surface. The angle between the lateral surface of the semiconductor light-emitting element and its upper base is not greater than 120°. The coating is directly on the upper base of the semiconductor light-emitting element such that the base of the coating is inscribed in the area of the upper base of the semiconductor light-emitting element. The coating is formed by depositing a drop of the said compound, which has viscosity of 2000-20000 cP, on the upper base of the semiconductor light-emitting element and subsequent hardening of the compound.

EFFECT: miniaturisation, increased reliability of the structure and improved optical properties of the semiconductor source.

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