METHOD OF DETERMINING DIFFUSION COEFFICIENT OF DOPANT ATOMS IN SEMICONDUCTOR Russian patent published in 2011 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: invention enables to determine the concentration profile of a dopant in a semiconductor from given capacity-voltage characteristic of a p-n junction and a mathematical model of the diffusion process through which the p-n junction was made. The method of determining the diffusion coefficient of dopant atoms in a semiconductor involves creation of a p-n junction in a lightly doped semiconductor under given diffusion conditions for which the mathematical expression of the concentration profile of distribution of dopant atoms with the diffusion coefficient as the argument is defined. At two values of the reverse voltage of the p-n junction, capacitance of the junction is measured, the modulation parametre of the space-charge region width of the p-n junction n, and the numerical dependency of the same modulation parametre from the diffusion parametre Dt, which is a product of the diffusion coefficient D and duration of the diffusion process t, is determined by solving a system of equations. The value of the diffusion parametre Dt, which corresponds to an experiment from which the diffusion coefficient D is determined by dividing by the duration of the diffusion process t, is determined.

EFFECT: low cost and labour input in controlling technological processes and design of technology for manufacturing semiconductor devices with one or more p-n junctions.

5 cl, 1 dwg, 3 tbl