FIELD: manufacture of semiconductor devices and integrated circuits, branches of technology associated with processes of doping and diffusion of impurities into semiconductors and metals. SUBSTANCE: process of diffusion of impurity into semiconductor is performed in two stages. Precipitation process is carried out by standard method in electric resistor heat- treating furnaces and process of redistribution of impurity over depth of semiconductor is performed in air at temperature close to room temperature in flux of high-energy beam with electron energy 9.5-12.0 MeV and integrated irradiation dose equal to $$$ with current density in beam equal to 2.0-15.0 $$$. EFFECT: enhanced efficiency of method.
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