FIELD: electricity.
SUBSTANCE: switching scheme is proposed for switching of big number of levels of switched voltage, in which the first switching group (1) is provided for each phase (R, S, T). In the method there provided is n second switching groups (4.1,…4.n) containing the first, the second, the third, the fourth, the fifth and the sixth controlled bidirectional power semiconductor switches (5, 6, 7, 8, 9, 10) and capacitor (23); at that, n≥1; the first controlled bidirectional power semiconductor switch (5) is connected in series and opposite to the second controlled bidirectional power semiconductor switch (6); the third controlled bidirectional power semiconductor switch (7) is connected opposite and in series to the fourth controlled bidirectional power semiconductor switch (8), the first (5) and the third (7) controlled bidirectional power semiconductor switches are connected to capacitor (11); the fifth controlled bidirectional power semiconductor switch (9) is connected directly to the fourth controlled bidirectional power semiconductor switch (8) and directly to connection point of the first controlled bidirectional power semiconductor switch (5) with capacitor (11), and the sixth controlled bidirectional power semiconductor switch (10) is connected directly to the second controlled bidirectional power semiconductor switch (6) and directly to connection point of the third controlled bidirectional power semiconductor switch (7) with capacitor (11). At n>1 each of n second switching groups (4.1,…4.n) is connected to the neighbouring second switching group (4.1,…4.n), and the first switching group (1) is connected to the first second switching group (4.1). There provided is the third (12) and the fourth (13) switching group, which are connected to n second switching group (4.n) and to each other.
EFFECT: reducing the stored energy of switching scheme, and space saving.
14 cl, 7 dwg
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Authors
Dates
2011-03-10—Published
2007-10-10—Filed