SWITCHING CONVERTER CIRCUIT Russian patent published in 2008 - IPC H02M7/48 

FIELD: communications.

SUBSTANCE: converter circuit for switching a number of levels of commutating voltage is proposed. The circuit has n first commutation groups (1.1,..., 1.n) on each phase (R, S, T). The n-th first commutation group (1.n) is formed by the first (2) and the second (3) controlled bidirectional power semiconductor switches, and the commutation groups from the first (1.1) to the (n-1)-th commutation group (1.(n-1)) are formed respectively by the first (2) and the second (3) controlled bidirectional power semiconductor switches and connected to the first (2) and the second (3) controlled bidirectional power semiconductor switches by a capacitor (4). Each of the first n first commutation groups (1.1,..., 1.n) is connected to respectively to the adjacent first commutation group (1.1,..., 1.n), and the first (2) and second (3) controlled bidirectional power semiconductor switches of the first commutation group (1.1) are also interconnected. To achieve the technical outcome, the accumulated electrical energy of the converter circuit n≥1 is reduced, and for this purpose there are p second (5.1,..., 5.p) and p third (6.1,..., 6.p) commutation groups, with, respectively, a first controlled bidirectional power semiconductor switch (7, 8), second controlled bidirectional power semiconductor switch (9, 10) and a capacitor (13, 14), and in this case p≥1. Each of the p second commutation groups (5.1,..., 5.p) are connected respectively to the second adjacent commutation group (5.1,..., 5.p), and each of the p third commutation groups (6.1,..., 6.p) is connected respectively to the adjacent third commutation group (6.1,..., 6.p). Further, the first second (5.1) and the first third (6.1) commutation groups have respectively a third controlled bidirectional power semiconductor switch (11, 12), connected in anti-parallel form to the corresponding second controlled bidirectional power semiconductor switch (9, 10). The first second commutation group (5.1) is connected to the first controlled bidirectional power semiconductor switch (2) of the n-th first commutation group (1.n), and the first third commutation group (6.1) is connected to the second controlled bidirectional power semiconductor switch (3) of the n-th first commutation group (1.n), and capacitor (13) of the p-th second commutation group (5.p) serially connected to capacitor (14) of the p-th third commutation group (6.p).

EFFECT: reduction of the accumulated electrical energy.

20 cl, 3 dwg