PROCEDURE FOR GROWTH OF MONO CRYSTAL OF SAPPHIRE ON SEED LEFT IN MELT DURING GROWTH Russian patent published in 2011 - IPC C30B17/00 C30B15/20 C30B15/28 C30B29/20 

Abstract RU 2417277 C1

FIELD: metallurgy.

SUBSTANCE: procedure is based on comparison of current parametres of growth of mono crystals at continuous control of weight and constant speed of crystallisation with results of periodic calculations by mathematic formulas describing non linear processes of motion of heat field and front of crystallisation in volume of crucible and at successive change of process parametres of growth. Here is disclosed complex chart of dependencies on time, weight and pulling speed of growing mono crystal at fore part growing. Charge and scull are degassed in vacuum chamber before charge melting.

EFFECT: production of mono crystals of exceptionally big size of cylinder shape due to elimination of radial non-symmetry of temperature field near front of crystallisation; facilitating structural perfection of mono crystal in whole volume owing to constant speed of crystallisation.

6 dwg, 1 ex

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RU 2 417 277 C1

Authors

Sinel'Nikov Boris Mikhajlovich

Motrenko Evgenij Ivanovich

Bukov Vitalij Ivanovich

Dates

2011-04-27Published

2009-08-03Filed