FIELD: metallurgy.
SUBSTANCE: method includes crystal 5 seeding on the seed crystal 1, its drawing from melt 2 with growing up and restriction to create constrictions, crystal 5 growing up, growing an cooling of the crystal 5, at that at seeding, constrictions creating and partial growing up stages the crystal 5 and melt 2 contact area is separated from main mass of the melt by screen 7, upon screen 7 bottom end immersion in the melt 2 the entire screen is fixed in this position by the support of its top end 8 on the crucible 6, the screen 7 is made in form of hollow profile section, screen 7 is removed from the melt 2 when ratio of diameter of the growing up crystal and set diameter of the crystal is 0.1-0.5. The screen can be suspended by branches or bosses of its top contour with possibility of the screen vertical movement upwards with the crystal 5, seed crystal 1, seed crystal holder 9, and top stock upon keeping the other elements of the crystallization zone fixed, at that the seed crystal 1 passes inside the screen 7.
EFFECT: assurance of stable monocrystal growth, production of the monocrystal with uniform shape.
2 cl, 4 dwg
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Authors
Dates
2015-08-20—Published
2014-02-14—Filed