PROCEDURE FOR GROWTH OF MONO CRYSTAL OF SAPPHIRE ON SEED LEFT IN MELT UNDER AUTOMATIC MODE Russian patent published in 2011 - IPC C30B15/20 C30B15/28 C30B17/00 C30B29/20 

Abstract RU 2423559 C2

FIELD: metallurgy.

SUBSTANCE: into unit of constants of automatic system of control of process there are input process parameters: reference, job definition and practical data of installation and of process of growth facilitating best qualities of mono crystal. There is determined sufficient complex of process parameters staring from degasification of charge and scull and ending with mono crystal cooling ensuring constant rate of crystallisation, turns of growing mono crystal at specified angles with specified pauses, and also calculation of dependencies facilitating fine partial mechanisms of compensation of deviations in weight of growing mono crystal from theoretical one implemented for the first time to ensure qualitative automatic control. Parameters are input into the unit of constants, comparison and calculation of automatic system of control of process. Corresponding automatic systems are connected and their operation is controlled by means of software for visualisation of process.

EFFECT: generation of mono crystal of perfect structure.

1 dwg, 1 ex

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RU 2 423 559 C2

Authors

Sinel'Nikov Boris Mikhajlovich

Motrenko Evgenij Ivanovich

Bukov Vitalij Ivanovich

Dates

2011-07-10Published

2009-08-03Filed