ARCHITECTURE OF IMAGE SENSOR WITH APPLICATION OF ONE OR MORE DEVICES WITH FLOATING GATE Russian patent published in 2011 - IPC H04N5/335 

FIELD: information technologies.

SUBSTANCE: pixel scheme comprises a semiconductor device with a floating gate, which includes a floating gate, a control gate, a drain and a source. The scheme also applies a photosensitive semiconductor device radiated with electromagnet radiation from the image. The pixel control circuit is connected to these components to change over the semiconductor device with the floating gate and the photosensitive semiconductor device into multiple controlled modes. These controlled modes include a mode of deletion and a mode of radiation. In deletion mode at least part of electric charge is removed from the floating gate, to change over the semiconductor device with the floating gate into the initial condition. In radiation mode the floating gate is charged at least partially under effect of voltage at the contact of the photosensitive semiconductor device. The voltage at the contact of the photosensitive semiconductor device complies with radiation of the photosensitive semiconductor device by electromagnet radiation from the image. The pixel control circuit may also change over the semiconductor device with the floating gate and the photosensitive semiconductor device to additional modes, such as a reading mode and a data saving mode. In the reading mode the electric current between the drain and the source of the semiconductor device with the floating gate is detected as an indicator of charging at the floating gate. In the data saving mode the change at the floating gate of the semiconductor device with the floating gate, which is produced during the radiation mode, is preserved, in spite of the further radiation of the photosensitive semiconductor device by electromagnet radiation from the image. The circuit, as well as one or more peripheral auxiliary circuits, may be implemented in a monolithic substrate, using, for instance, common processes of CMOS manufacturing.

EFFECT: increased sensitivity and expansion of dynamic range.

20 cl, 10 dwg