FIELD: memory units. SUBSTANCE: memory register of non-volatile memory unit has floating gate, programming region which has first current path to floating gate. This results in possibility to control supply of charge carriers to floating gate through first current path or to remove charge carriers which are accumulated in floating gate. Control region has second current path which is isolated from first one. Number of charge carriers accumulated in floating gate is checked by means of second current path during programming. EFFECT: simultaneous programming and checking using isolation of programming and control regions. 54 cl, 18 dwg
