PROCEDURE FOR GROWTH OF 3-D PHOTON CRYSTAL ON BASE OF FILM OF OPAL WITH SILICON Russian patent published in 2011 - IPC C30B29/10 B82B3/00 

FIELD: metallurgy.

SUBSTANCE: procedure consists in sedimentation of opal film of 5.0-40.0 mcm thickness out of suspension of spherical particles of amorphous silicon dioxide in ethyl alcohol on dielectric substrate. Also, particles have average diameter 880 nm, dispersion of diameters less, than 1 % and concentration 0.5÷2 vol. %. Further, the procedure consists in drying, in settling a layer of amorphous silicon in vacuum on internal surface of opal film pores by thermal decomposition of mixture of mono-silane with argon at concentration of 5 vol. % and pressure of gas mixture 50÷70 kPa, voluminous gas mixture flow rate 0.02±0.01 cm³/min, temperature 520÷540°C, and duration 5÷7 h, in etching film in water solution of hydrofluoric acid for removal of spherical particles of amorphous silicon dioxide, in inversion, repeated drying and in settling a layer of amorphous silicon on internal surface of pores of opal film under the same conditions.

EFFECT: creation of film inverted composite of opal-silicon with increased width of total photon forbidden-zone in spectral region of 1.5 mcm.

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