DIFFERENTIAL AMPLIFIER Russian patent published in 2011 - IPC H03F3/189 H03F1/42 H03F3/45 

FIELD: electricity.

SUBSTANCE: differential amplifier includes the first (1) and the second (2) input transistors to emitters of which there connected is the first (3) and the second (4) p-n junctions, current-stabilising bipole (5) connected between common node of the first (3) and the second (4) p-n junctions and the first (6) bus of power sources, the first (7) resistor of collector load the first output of which is connected to collector of the first (1) input transistor and the first output of device; the second (8) resistor of collector load, the first output of which is connected to collector of the second (2) input transistor and the second output of the device, and the second (9) bus of power sources. To the diagram there introduced is the first (10), the second (11), the third (12) and the fourth (13) additional transistors; base of the first (10) additional transistor is connected to base of the first (1) input transistor; collector of the first (10) additional transistor is connected to collector of the first (1) input transistor; base of the second (11) additional transistor is connected to base of the second (2) input transistor; collector of the second (11) additional transistor is connected to collector of the second (2) input transistor; emitter of the first (10) additional transistor is connected to collector of the third (12) additional transistor; base of the third (12) additional transistor is connected to emitter of the first (1) input transistor; emitter of the third (12) additional transistor is connected to current-stabilising bipole (5); emitter of the second (11) additional transistor is connected to collector of the fourth (13) additional transistor; base of the fourth (13) additional transistor is connected to emitter of the second (2) input transistor; emitter of the fourth (13) additional transistor is connected to current-stabilising bipole (5); the second output of the first (7) resistor of collector is connected to the second (9) bus of power sources through the first (14) additional resistor and through the first (15) additional capacitor to emitter of the first (10) additional transistor; the second output of the second (8) resistor of collector load is connected to the second (9) bus of power sources through the second (16) additional resistor and through the second (17) additional capacitor to emitter of the second (11) additional transistor.

EFFECT: increasing limit values of amplification coefficient as to DA voltage for variable HF and microwave signals at low voltage power supply.

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