DIFFERENTIAL OPERATIONAL AMPLIFIER WITH PARAPHASE OUTPUT Russian patent published in 2011 - IPC H03F3/34 H03F3/45 

FIELD: radio engineering.

SUBSTANCE: differential operational amplifier with paraphase output comprises the first (1) and second (2) input transistors, the first (3) and second (4) output transistors, emitters of which are connected to appropriate first (5) and second (6) paraphase outputs of the device and via the first (7) and second (8) current-stabilising dipoles are connected to the bus of the first (9) supply source, the first (10) resistor of collector load, connected between the base of the first (3) output transistor and the bus of the second (11) supply source, the second (12) resistor of collector load connected between the base of the second (4) output transistor and the bus of the second supply source (11), the third (13) current-stabilising dipole connected between the emitter of the first (1) input transistor and the bus of the first (9) supply source, besides, the collectors of the first (3) and second (4) output transistors are connected to the bus of the second (11) supply source. The collector of the first (1) input transistor is connected to the input of the first (14) additional current mirror and via the third (15) resistor of the collector load is connected to the bus of the second (11) supply source, besides, the collector output of the first (14) additional current mirror is connected to the base of the first (3) output transistor, and the common emitter output of the first (14) additional current mirror is connected to the emitter of the first (3) output transistor, the collector of the second input transistor is connected to the input of the second (16) additional current mirror and via the fourth (17) resistor of collector load is connected to the bus of the second (11) supply source, besides, the collector output of the second (16) additional current mirror is connected to the base of the second (4) output transistor, and the common emitter output of the second (16) additional current mirror is connected to the emitter of the second (4) output transistor, the emitter of the first (1) input transistor is connected to the emitter of the first (18) additional transistor, the emitter of the second (2) input transistor is connected to the emitter of the second (19) additional transistor and via the fourth (20) current-stabilising dipole it is connected to the bus of the first (9) supply source, the collector of the first (18) additional transistor is connected to the base of the first (3) output transistor, the collector of the second (19) additional transistor is connected to the base of the second (4) output transistor, combined bases of the first (18) and the second (19) additional transistors are connected to the emitter of the first output transistor via the first (21) auxiliary resistor and are connected to the emitter of the second (4) output transistor via the second (22) auxiliary resistor.

EFFECT: increased limit values of amplification ratio by differential amplifier voltage at low-voltage supply within the technological process SGB25VD.

6 dwg