METHOD OF FORMING ION EMITTER FOR LASER DESORPTION-IONISATION OF CHEMICAL COMPOUNDS Russian patent published in 2011 - IPC H01L21/268 B82B3/00 

FIELD: chemistry.

SUBSTANCE: in the method of forming an ion emitter for laser desorption-ionisation of chemical compounds through processing semiconductor materials, the latter is carried out by exposing the surface of semiconductor material to a stream of pulsed laser radiation with intensity greater than the melting threshold of the used material, which ensures the material melts at a depth of not less than 5 nm. The processed semiconductor material re-exposed to electromagnetic radiation with intensity less than the melting threshold of the used material in the presence of vapour of an ion-donor reagent.

EFFECT: high accuracy of analysis and low limits for detecting defined compounds, possibility of repeated use of the formed ion emitter.

8 cl, 5 dwg