RECEPTION METHOD OF NANOSTRUCTURE SILICON BASE PLATES Russian patent published in 2009 - IPC H01L21/306 B82B3/00 

FIELD: physics; semiconductors.

SUBSTANCE: invention concerns processes of chemical machining of slices and can be used for creation of silicon bodies with nanosized structure, applicable as emitters of ions in analytical devices and for creation of light emitting devices. Essence of the invention consists in the reception method of nanostructure silicon base plates by processing of siliceous substances with a gas-vapor mix containing hydrofluoric acid and an oxidising substance, as an oxidising substance halogen or its mix with a oxygen-containing oxidising reagent taken in number of not less than 1.0% is used. Iodine can be used as halogen, and in quality of an oxygen-containing oxidising reagent - a reagent chosen from the group: ozone, peroxide, sulfuric acid, nitric oxide. The invention allows to Iodine can be used as halogen, and in quality of an oxygen-containing oxidising reagent - a reagent chosen from the group: ozone, peroxide, sulfuric acid, nitric oxide.

EFFECT: obtaining of base plates keeping stability of physical and chemical properties of a surface at long storage in natural conditions and providing high uniformity of physical and chemical properties of a surface and, accordingly, higher reproducibility of the analysis at use of such base plates.

8 cl, 6 dwg, 1 tbl