METHOD OF FORMING LAYER OF POROUS SILICON ON CRYSTALLINE SUBSTRATE Russian patent published in 2019 - IPC H01L21/306 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor technology and specifically to processes of electrochemical formation of porous silicon and a promising structured material. Technical result is achieved by developing a non-electrolytic method of forming porous silicon layers. Disclosed method of forming a layer of porous silicon on a crystalline substrate using an internal current source in an electrolyte involves layers of porous silicon on a polycrystalline p-Si substrate obtained by non-electrolytic means in the absence of counterelectrode in 40 % NH₄HF₂ with continuous injection of ozone-oxygen mixture with ozone dose of not more than 7.5 mg/l.

EFFECT: technical result of invention is elimination of disadvantages of traditional electrolytic methods, namely use in them of expensive platinum as a counterelectrode, environmental hazard, use of corrosion-active agents and fire-hazardous organic component, limitation of electrochemical formation of porous silicon only on monocrystalline samples.

1 cl, 2 dwg