NON-METAL POSITIVE PHOTORESIST DEVELOPER Russian patent published in 2013 - IPC G03F7/26 C23C22/00 

FIELD: physics.

SUBSTANCE: non-metal positive photoresist developer contains 1.0-5.0% aqueous solution of tetramethylammonium hydroxide or trimethyl(2-hydroxyethyl)ammonium hydroxide and a fluorine-containing surfactant, at solution pH of not less than 11. The surfactant used is compounds of formula: R_fZQA, where for n=3; m=1-3; Z=SO₂; Concentration of the surfactant in the solution ranges from 10 to 100 ppm.

EFFECT: non-metal positive photoresist developer based on aqueous solution of organic alkalis and an organofluorine surfactant, which improves the quality of developing a topological structure and uniformity of reproducing feature sizes.

2 cl, 1 tbl, 3 dwg