METHOD FOR GROWING PROFILED CRYSTALS OF HIGH-MELTING COMPOUNDS Russian patent published in 2012 - IPC C30B15/34 

FIELD: metallurgy.

SUBSTANCE: method involves loading of original stock, vacuum treatment, annealing, puffing of inert gas, melting of original stock, adding of molten metal to capillaries of shaper at lifting of melting pot, etching, drawing of crystal at molten metal overheating in the melting pot relative to its crystallisation temperature, separation from molten metal and cooling of grown crystal. In the invention the melting of original stock is performed in several stages with stepped temperature increase at every stage. Lifting of melting pot and adding of molten metal to capillaries of the shaper is performed stage by stage as well, and melting pot is lifted at the same time and temperature is increased to the etching temperature with further exposure at every stage. At that, during exposure at etching power there performed is circulation of molten metal in capillaries of the shaper at least by single lowering of melting pot without separating the shaper from the molten metal and its further lifting to initial position. Drawing is performed at the crystal temperature exceeding the deposit formation temperature from gaseous atmosphere, and after the separation the grown crystals are continued to be lifted with the growth speed at the crystal separation temperature.

EFFECT: invention allows increasing yield ratio and reducing the cost of the obtained crystals owing to decreasing the number of bubbles and centres of dissipation, which allows obtaining crystals with good optic characteristics, including qualitative wide and long plates.

8 cl, 1 tbl