DEVICE TO REMOVE HEAT FROM CRYSTAL OF SEMICONDUCTOR INTEGRATED CIRCUIT Russian patent published in 2012 - IPC H01L23/34 

Abstract RU 2440641 C1

FIELD: power engineering.

SUBSTANCE: in the device for heat removal from a crystal of a semiconductor integrated circuit, which releases thermal energy during operation, according to the invention, the developed surface of the semiconductor integrated circuit crystal represents cogs or tubes of cooling in the form of single crystals grown on the semiconductor integrated circuit crystal substrate, forming a monolithic structure with the crystal. The invention makes it possible to create a developed surface of heat exchange with minimum contact thermal resistance, thus to significantly intensify heat removal from crystals of semiconductor integrated circuits and to reduce weight and dimension characteristics of the device.

EFFECT: minimised contact thermal resistance in the device of heat removal from the semiconductor integrated circuit crystal, which releases thermal energy during operation, and reduction of its weight and dimension characteristics.

3 cl, 7 dwg

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RU 2 440 641 C1

Authors

Drozdov Igor' Gennad'Evich

Kozhukhov Nikolaj Nikolaevich

Konovalov Dmitrij Al'Bertovich

Shmatov Dmitrij Pavlovich

Dakhin Sergej Viktorovich

Savinkov Andrej Jur'Evich

Nebol'Sin Valerij Aleksandrovich

Dates

2012-01-20Published

2010-11-10Filed