METHOD OF CREATING THROUGH MICRO CHANNELS WITH DIAMETERS OF MICRON AND SUBMICRON SIZES IN SILICON CRYSTAL WITH HELP OF LASER PULSES Russian patent published in 2016 - IPC H01L21/78 

FIELD: physics.

SUBSTANCE: invention can be used for creation of through micro-and submicron channels in silicon crystal. This invention consists in that method of creating through micro channels with diameters of micron and submicron sizes in silicon crystal with help of laser pulses consists in piercing holes in silicon crystal by laser due to guidance of focal spot on surface of chip and multistage displacement of said spot towards inlet surface of crystal, wherein, in order to obtain micro channels with diameters of micron and submicron sizes in silicon crystal femtosecond laser chrome-forsterite laser is used, and multistep movement of focal spot in direction to input surface of crystal is carried out with radiation wavelength of 1,240 nm, at which photon run length in structure of silicon is equal to 1 cm, and energy of quanta is less than width of forbidden zone.

EFFECT: simplified method for creating through micro-and submicron channels in silicon crystal for creation of chips, having possibility of cooling of inner structure layers.

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