METHOD OF INTENSIVE COOLING OF HIGH-HEAT-STRESSED SEMICONDUCTOR DEVICES Russian patent published in 2018 - IPC H01L23/34 

FIELD: cooling.

SUBSTANCE: use for cooling electronic components. Method of intensive cooling of high-heat-stressed semiconductor devices involves the removal of heat fluxes from the cooled surface using liquid as a coolant flowing in the channels of the cooling system, while for intensive cooling of high-heat-stressed semiconductor devices boiling of the dielectric liquid that is not heated to saturation temperature is used, at a flow velocity of the dielectric liquid in the channel 5–7 m/s and the temperature of its underheating of 15-40 °C.

EFFECT: ensuring the possibility of increasing the efficiency of withdrawing extreme heat fluxes, the absence of entrainment of vapor bubbles into the core of the flow or into the volume of the liquid, absence of permanent centers of vaporization due to their deactivation due to the condensation of the vapor left in them after separation from the center of the vapor bubble, which eliminates the occurrence of crisis phenomena in the cooling system.

1 cl, 3 tbl, 10 dwg