PRESSURE MEASUREMENT DEVICE Russian patent published in 2012 - IPC G01L9/00 

FIELD: physics.

SUBSTANCE: pressure measurement device has a pedestal, an adapter made from semiconductor, a semiconductor pressure sensor with a base and a measuring membrane. The adapter has a circular depression inside, which surrounds a first cylindrical area and a second cylindrical area of the adapter. The method of making the pressure measurement device involves making an adapter from three silicon wafers. The silicon wafers are stacked and joined with each other by microwelding. The semiconductor pressure sensor is mounted on the side of the first silicon layer facing away from the second silicon layer.

EFFECT: reliable protection of the sensitive measuring membrane from mechanical deformations.

11 cl, 11 dwg