MEMS PRESSURE SENSOR Russian patent published in 2024 - IPC G01L7/08 

FIELD: measuring.

SUBSTANCE: invention relates to pressure sensors. MEMS pressure sensor comprises a substrate, in the centre of which there is a through groove, and thin-film membranes, wherein the thin-film membranes are made of a round shape, first thin-film membrane is formed on a silicon substrate, the central part of the first thin-film membrane is open in a through groove made in the silicon substrate, a second thin-film membrane of a smaller radius is formed in the upper part of the silicon substrate, initial deflection of membranes to the substrate or from the substrate is selected based on the measured pressure: to measure the excess pressure, the first thin-film membrane is bent towards the substrate, and to measure pressure close to vacuum, the second membrane bends away from the substrate, the thickness and radius of the membrane are selected based on the required critical measured pressure according to the proposed formula, a calculation formula for determining the current pressure value is also proposed.

EFFECT: invention provides higher sensitivity of the sensor due to preliminary formation of the membrane of the required shape and area.

1 cl, 4 dwg