MICROELECTRON PRESSURE TRANSDUCER Russian patent published in 2001 - IPC

Abstract RU 2169912 C1

FIELD: high-precision measurement of pressures in wide range of temperatures and pressures. SUBSTANCE: base of proposed transducer is made of two or more parts and has specific T-shaped form. Upper part of base is completely identical to silicon sensitive element in configuration, dimensions and crystallographic orientation and low part of base is produced from silicon, glass or ceramic so that its side external dimensions fall within dimensions of recesses under membrane. Base can be assembled from above- mentioned parts or can come as one silicon unit. Corresponding structural elements of transducer are made fast with use of glass. EFFECT: increased precision of measurement of absolute value of pressure or pressure differential, expanded range of working temperatures and enhanced functional reliability of transducer. 1 dwg

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RU 2 169 912 C1

Authors

Zimin V.N.

Kovalev A.V.

Pankov V.V.

Timoshenkov S.P.

Shelepin N.A.

Dates

2001-06-27Published

2000-03-30Filed