SEMICONDUCTOR OR DIELECTRIC MATERIAL SURFACE METALLISATION METHOD Russian patent published in 2012 - IPC C23C16/18 

FIELD: metallurgy.

SUBSTANCE: invention can be used for obtaining heterostructures of micro- and nanoelectronics, high-efficiency catalysts with developed high-porous surface of carrier, as well as for obtaining new nanomaterials. Working gas medium containing volatile metal complex formed with small 2-5-atomic molecules-ligands is pre-formed; it is transferred to the surface subject to metallisation, the action leading to decomposition of metal complex and deposition of metal layer is performed. Formation of working gas medium, synthesis of metal complex and metallisation of the surface is performed in one and the same volume of reactor. For synthesis of volatile metal complex there used are molecules-ligands forming together with metals the ammoniates, carbonyl complexes and their homologs or molecules-ligands contained in short-living free-radical, ionised or excited state. Copper, copper oxide or their mixture is used as disperse filler used for synthesis of metal complex.

EFFECT: increasing the efficiency and quality of metallisation, capacity and repeatability of metallisation process; achieving the possibility of metallisation of nanostructures and continuity of application process of two and more layers of various materials, as well as enlarging the range of materials used for metallisation and obtained metallised coatings and the range of materials the surface of which is subject to metallisation.

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