FIELD: physics.
SUBSTANCE: invention relates to micro- and optoelectronic engineering. In the method of forming a flat smooth surface of a solid material, a hole is formed on the substrate of the solid material with parts of the surface deviating in diametrically opposite directions, which ensure opposite direction of fronts of atomic stages. Thermoelectric annealing is carried out by passing electric current whose value causes resistive heating of the substrate material to temperature of activated sublimation of atoms of the top atomic layer with movement on the surface of monoatomic stages. During annealing, the working surface is cleaned from natural oxide and contaminants. The main step or main and additional steps of thermoelectric annealing are then carried out in a vacuum of 10-8 Pa. Current is passed in parallel to the working surface of the substrate during a period of time and under temperature conditions which form, on the periphery of the inner part of the hole, accumulation of monoatomic stages with high density, with the emergence of single concentric monoatomic stages uniformly distributed on the periphery of the inner part of the hole and separated by a singular terrace. Supply of electric current is cut off and temperature of the substrate is lowered.
EFFECT: obtaining atomically smooth surfaces, reducing roughness to 0,4 Å, controlling the size of the flat smooth surface and increase thereof across by 100-300 mcm.
9 cl, 3 dwg
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Authors
Dates
2012-06-20—Published
2011-01-11—Filed