LIGHT-EMITTING DIODE RADIATION SOURCE Russian patent published in 2012 - IPC H01L33/64 

FIELD: physics.

SUBSTANCE: light-emitting diode radiation source has several semiconductor optical band light emitters connected by an electric circuit into at least one base element, a base element holder with connecting leads, a cover lens, and a radiator for removing heat from the base element. According to the invention, parameters of the base element must satisfy the following relationship: 20<ΔE_g/eRS≤35, where ΔE_g is the band-gap of the initial material of the base element (eV); S is the total surface area of the p-n junction of the base element (cm²); R is electrical resistance of the base element (ohm); e is electron charge - 1.602·10^-19 C.

EFFECT: longer life of light-emitting diode radiation sensors.

10 cl, 1 tbl, 5 dwg