FIELD: electricity.
SUBSTANCE: sounding of test specimen is performed with emission of photon energy less than width of forbidden gap; modulation of non-equilibrium carriers' concentration in semi-conductor is made and parameters of sounding emission passed through test specimen and reflected back are measured; life span of non-equilibrium charge carriers is calculated by measured parameters of sounding emission. Test specimen is made as structure of metal, dielectric and semi-conductor, at that concentration of non-equilibrium carriers' concentration is modulated by voltage supply between metal and semi-conducting layer of this structure.
EFFECT: possibility of life span measurement for non-equilibrium carriers in thin semi-conducting layers.
3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| APPARATUS FOR CONTACTLESS MEASUREMENT OF LIFETIME OF NONEQUILIBRIUM CHARGE CARRIERS SEMICONDUCTORS (VERSIONS) | 2010 |
|
RU2444085C1 |
| METHOD OF CONTACT-FREE DETERMINING OF THICKNESS OF EPITAXIAL SEMICONDUCTOR LAYERS | 0 |
|
SU1737261A1 |
| 0 |
|
SU1778821A1 | |
| METHOD FOR CONTACT-FREE DETERMINATION OF LIFE SPAN FOR NON-EQUILIBRIUM CARRIERS IN SEMI-CONDUCTORS | 2010 |
|
RU2450387C1 |
| PHOTOMETER | 0 |
|
SU1758527A1 |
| METHOD OF DETERMINATION OF LIFE TIME OF NON-EQUILIBRIUM CARRIER IN SEMICONDUCTOR PLATES | 1991 |
|
RU2006987C1 |
| METHOD AND DEVICE FOR DETERMINING DIFFUSION LENGTH OF CHARGE CARRIERS IN SEMICONDUCTOR PLATES | 2015 |
|
RU2578731C1 |
| METHOD OF DETERMINATION OF RECOMBINATION PARAMETERS OF SEMICONDUCTOR MATERIALS | 1986 |
|
SU1356901A1 |
| METHOD FOR DETERMINING CONCENTRATION OF CHARGE CARRIERS IN DEGENERATED SEMICONDUCTORS | 1989 |
|
SU1694018A1 |
| METHOD FOR FLAW DETECTION IN SEMICONDUCTOR INSTRUMENTS AND LARGE SCALE CIRCUITS BASED ON STRUCTURE METAL-DIELECTRIC-SEMICONDUCTOR | 1991 |
|
RU2009517C1 |
