METHOD OF DETERMINATION OF LIFE TIME OF NON-EQUILIBRIUM CARRIER IN SEMICONDUCTOR PLATES Russian patent published in 1994 - IPC

FIELD: semiconductor technology. SUBSTANCE: method of determinations of life time of non-equilibrium carriers in semiconductor plates is based on radiation treatment of plates with IR radiation with length of wave from region of absorption with free charge carriers and with pulses of excitation radiation which length exceeds life time of carriers. Sample is scanned and relative change of intensity of probing radiation passed through sample in optimal points of it corresponding to maximal values of change of passing of sample is measured. The same is true for implementation of capability of separate measurement of time of life of non-equilibrium electrons and holes. In addition value of relative photoinduced change of intensity of probing radiation passed through sample in points of it corresponding to points nearest to optimal points of sample with interference extreme of passing of sample is measured and values of time of life of non-equilibrium electrons and holes is found by calculation. EFFECT: simplified approach with reliable results. 4 dwg