METHOD OF DETERMINATION OF RECOMBINATION PARAMETERS OF SEMICONDUCTOR MATERIALS Russian patent published in 1995 - IPC

FIELD: metrology of electrophysical parameters of semiconductors. SUBSTANCE: in agreement with invention sample is in succession irradiated with exciting radiation on two lengths of waves from range of inherent absorption of examined material tied up with certain relation. In this case excited part of semiconductor is irradiated with probing radiation with length of wave from region of absorption by free charge carriers. Relative change of intensity of probing radiation passed through sample caused by excitation of unbalanced charge carriers with exciting radiation on each chosen length of wave is registered. Desired parameters are found separately by relative change of intensity measured on two lengths of waves of exciting radiation. EFFECT: provision for separate determination of volumetric life time and rate of surface recombination, expansion of class of examined materials. 2 cl, 1 dwg