METHOD FOR FLAW DETECTION IN SEMICONDUCTOR INSTRUMENTS AND LARGE SCALE CIRCUITS BASED ON STRUCTURE METAL-DIELECTRIC-SEMICONDUCTOR Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: method involves illumination of tested instruments by pulse laser beam, measuring electric parameters of tested instruments, comparison of measured parameters to reference ones. Wave length λ is in the following range: 1,24/E_d<λ<1,24 E_s and radiant emittance l is less than Q_m=I_d/T_m(1-R)κ·T_max and pulse duration is less than Q_m=1/α² k, where E_d and E_s are width prohibited zone of dielectric and semiconductor correspondingly, I_d is threshold radiant emittance J/m², R is metal layer albedo, κ is ratio of radiation absorption in layers of metal and dielectric, T_m and T_max are corresponding temperatures for semiconductor melting point and for non-reversible changes in structure metal-dielectric-semiconductor caused by laser beam, k and α are values of temperature conductivity and absorption correspondingly. EFFECT: increased functional capabilities.