FIELD: information technology.
SUBSTANCE: systems, schemes and methods for adaptation of word line (WL) pulse widths used in memory systems are disclosed. One version of invention implementation is aimed to device containing memory system. The device includes the following: memory device operating according to pulse of word line (WL) with associated pulse width WL; built-in self test (BIST) module which interacts with memory device where BIST module is made capable to execute self-testing of memory device internal functionality and provide signal indicating whether the memory device has passed self-testing or not; and WL adaptive control scheme, which interacts with BIST module and memory device where WL adaptive control scheme is made capable to adjust memory device WL pulse width based on signal provided by BIST module.
EFFECT: higher characteristics of performance, consumed power and stability of operation of memory cells.
38 cl, 5 dwg
