FIELD: information technologies.
SUBSTANCE: magnetoresistive random access memory with spin transfer torque (STT-MRAM) having source lines. Besides, each source line is substantially arranged in parallel to a word line connected to the first row of bit cells. Each source line is substantially arranged perpendicularly to bit lines connected to the first row of bit cells. Besides, the STT-MRAM device comprises the following components: a device for setting lower voltage in a line of bits of the selected bit cell during recording operation; a facility for setting high voltage in lines of bits of non-selected bit cells during recording operation; a selector of source lines connected to multiple selection lines. Each of selection lines is connected to one of many source lines and arranged as capable of activating the selection line, and an activated line of selection activates a source line; a setting module of a source line connected to each of many source lines, and arranged as capable of setting high voltage on an activated source line during recording operation.
EFFECT: improved stability of recording and reduced dimensions of a bit cell in STT-MRAM.
21 cl, 18 dwg
