MITIGATING READ DISTURB IN A CROSS-POINT MEMORY Russian patent published in 2018 - IPC G11C13/00 

Abstract RU 2653320 C2

FIELD: computer engineering.

SUBSTANCE: invention relates to computer engineering. Device for determination of a snap back event comprises a memory controller selecting a target memory cell for a memory access operation and comprising: polling module for determining whether the snap back event occurs during the polling interval of the readout completion time interval; and a writeback module for writing back a logical unit to a memory cell during the readout completion time interval, in response to detecting the snap back event during the readout completion time interval; and a switch circuit comprising word line switch (WL) to couple a target WL to a select voltage source WL and bit line switch (BL) to couple a target BL to a select voltage source BL; wherein the memory controller is configured to control the switch circuit for partially turning off at least one of the WL switch and the BL switch at the time or near the start of the polling interval, and to turn on at least one of the WL switch and the BL switch in response to detecting the snap back event during the read out completion time interval.

EFFECT: technical result is to reduce the effective capacity of the memory element.

12 cl, 4 dwg

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RU 2 653 320 C2

Authors

Chu Deniel Dzh.

Pangal Kiran

Franklin Natan R.

Damle Prashant S.

Chaokhun Khu

Dates

2018-05-07Published

2015-03-09Filed