SEMI-BRIDGE TRANSISTOR INVERTER Russian patent published in 2012 - IPC H02M7/538 

FIELD: electricity.

SUBSTANCE: semi-bridge transistor inverter contains in its power part a semi-bridge of two transistors shunted with two bypass diodes and two capacitors forming, jointly with the transistors, a bridge connected to the power supply source with the DC diagonal and loaded to the power transformer primary winding with the AC diagonal; the power transformer has a secondary winding; serially included in the transformer primary winding circuit are a split capacitor and an adjustable choke; the transformer secondary winding is designed according to a midpoint diagram with a two-stroke rectifier; the semi-bridge of two transistors is shunted with two resonance capacitors.

EFFECT: creation of an efficient and reliable welding inverter with a high performance coefficient and low weight and dimension parameters.

1 dwg