SINGLE-PHASE SEMI-BRIDGE TRANSISTOR INVERTER Russian patent published in 2012 - IPC H02M7/5387 

FIELD: electricity.

SUBSTANCE: invention relates to electric engineering, namely, to single-phase semi-bridge transistor inverters, is designed for use in electrotechnical industry and may be applied in various secondary sources of supply, for instance, in electric welding devices, charging devices, sources of current with high stabilisation of output rectified current, etc. The proposed device for this comprises an input rectifier, an output rectifier, a smoothening capacitor, a throttle, a current sensor, a high-frequency transformer and a control system, arranged on the basis of transistor keys. Terminals of connection to the load and a current sensor via a unit of galvanic isolation are connected with a unit of anticipatory correction and with a control system.

EFFECT: reduced sensitivity of an inverter to load oscillations and higher stability of an output rectified current as a result.

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