SEMICONDUCTOR DEVICE AND DISPLAY DEVICE Russian patent published in 2012 - IPC H03K17/06 G11C11/40 

FIELD: electricity.

SUBSTANCE: semiconductor device comprises multiple transistors with a channel of n-type, at the same time the circuit comprises the following: from multiple transistors, a transistor (T1), including a contact outlet of a drain to receive voltage VDD, a contact outlet of a source and a contact outlet of a gate to receive an inlet signal (IN); from multiple transistors, a transistor (T2), comprising a contact outlet of a drain to receive voltage VDD, a contact outlet of a source connected to an exit contact outlet (OUT), and a contact outlet of a gate connected to a contact outlet of a transistor (T1) source; and a capacitor (C1), represented between a unit (n1) and a contact outlet (CK) of a sync signal to receive a sync signal. A sync signal introduced into a contact outlet (CK) of a sync signal has a frequency higher than frequency of an outlet signal taken out of an exit contact outlet.

EFFECT: prevention of a lower level of signal electric potential.

11 cl, 47 dwg