FIELD: electricity.
SUBSTANCE: assembled lines or units of the thermoelectric generator (TEG) are subjected to the impact of alternating or pulse reversed voltage with magnitude from 100 V to 10000 V by way of its application to the contact plates positioned on different sides of the semiconductor elements with the help of electrodes. The maximum size of the electrodes cross section is no more than 0.5 of the contact plate thickness. The electrodes are in electrical contact with the plates or are positioned at a distance from the latter, such distance being less than the medium breakdown distance at the voltage concerned. One scans the TEG unit surface with the voltage application point for each semiconductor element to undergo treatment at least once with each voltage polarity.
EFFECT: TEG inner resistance reduction.
1 dwg
Title | Year | Author | Number |
---|---|---|---|
THERMAL BATTERY MANUFACTURING METHOD | 2018 |
|
RU2694797C1 |
THERMOELEMENT | 2023 |
|
RU2805247C1 |
MANUFACTURING METHOD OF COMPOSITE THERMOELEMENT BRANCH | 2016 |
|
RU2624615C1 |
THERMOPILE MANUFACTURING METHOD | 2004 |
|
RU2248070C1 |
METHOD FOR MANUFACTURE OF SEMICONDUCTOR PATHS FOR THERMOELECTRIC MODULE AND THERMOELECTRIC MODULE ITSELF | 2012 |
|
RU2515128C1 |
LONG-MEASURING SEMICONDUCTOR PIECE FOR THERMOELECTRIC DEVICES | 1999 |
|
RU2181516C2 |
METHOD OF PRODUCING COMPOSITE BRANCH OF THERMOELEMENT OPERATING IN RANGE OF TEMPERATURES FROM ROOM TO 900 °C | 2015 |
|
RU2607299C1 |
METHOD OF OPERATION OF THERMOELECTRIC GENERATOR AND DEVICE FOR ITS IMPLEMENTATION | 2019 |
|
RU2742041C1 |
METHOD FOR LOCAL MEASURING RESISTIVITY OF SEMICONDUCTORS AND DEVICE FOR IMPLEMENTATION OF SAID METHOD | 0 |
|
SU1822972A1 |
THERMOELECTRIC GENERATOR BASED ON SEEBECK EFFECT | 2023 |
|
RU2811638C1 |
Authors
Dates
2012-09-10—Published
2011-06-20—Filed