THERMOPILE MANUFACTURING METHOD Russian patent published in 2005 - IPC

FIELD: thermal electricity; thermopile manufacture.

SUBSTANCE: proposed method includes manufacture of n and p wafers by compressing powders of semiconductors at temperature not to exceed 150 ⁰C and pressure of 1 to 2 t/cm². Compression is made in direction of thermopile heat flux. Box-shaped magazine is made of plastic conducting material. Slits are made on opposing walls at distance equal to total thickness of wafers and their insulating shims. Box is filled with alternating n and p wafers. The latter are separated by insulating shims. Upon filling the box with shims workpiece obtained is additionally compressed at high pressure of 3 to 5 t/cm² and temperature of 350 to 500 ⁰C in direction parallel to contact surfaces of switching buses and wafers. Upon removal of solid walls of box workpiece obtained in this way is cut into thermopiles in direction perpendicular to that of slits.

EFFECT: enhanced productivity of method and reduced contact resistance.

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