METHOD OF PREPARING ANHYDROUS FILM-FORMING SOLUTIONS FOR FORMING FERROELECTRIC LEAD ZIRCONATE-TITANATE FILMS WITH LOW FREEZING POINT Russian patent published in 2012 - IPC C01G21/00 C01G23/00 C01G25/00 B05D5/12 C04B35/491 

FIELD: chemistry.

SUBSTANCE: invention can be used in producing nonvolatile ferroelectric memory. Anhydrous film-forming solutions for forming ferroelectric lead zirconate-titanate films are prepared by obtaining anhydrous lead acetate and dissolving it in an organic solvent while adding zirconium and titanium alcoholates, followed by complexing reactions. The anhydrous lead acetate is obtained by solid-phase synthesis from lead oxide PbO via reaction thereof with a small amount of glacial acetic acid in the presence of acetic anhydride, taken in excess of 5 wt % stoichiometric. Further, the obtained mass is dried to granular state in a vacuum using a rotary evaporator at residual pressure of 0.1-1.6 kPa and temperature 30-80°C.

EFFECT: invention enables to reduce power consumption and time for carrying out complexing reactions of anhydrous lead acetate with zirconium and titanium alcoholates, and the freezing point of the perovskite phase while maintaining sufficiently high electrophysical characteristics, and high environmental safety.

4 cl, 2 dwg