LIGHT-EMITTING DIODE LIGHT SOURCE Russian patent published in 2013 - IPC H01L33/34 

Abstract RU 2479070 C2

FIELD: physics.

SUBSTANCE: light-emitting diode light source has film-type semiconductor layers deposited on a current-conducting substrate which serves as one of the electrodes, having a crystalline structure with p-n junctions in many grains of the polycrystalline film and coated on the outside by a layer of transparent current-conducting material which serves as the second electrode.

EFFECT: designing a light source having improved longevity, high integral light flux and is cheaper.

1 dwg

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RU 2 479 070 C2

Authors

Andreev Viktor Viktorovich

Il'Gisonis Viktor Igorevich

Korshunov Sergej Nikolaevich

Martynenko Jurij Vladimirovich

Skorlupkin Igor' Dmitrievich

Dates

2013-04-10Published

2011-02-03Filed