METHOD OF SHF FILTER FABRICATION Russian patent published in 2013 - IPC H01P1/20 

Abstract RU 2487445 C1

FIELD: electrical engineering.

SUBSTANCE: method is implemented at dielectric substrate having at least one side of excitation elements is metalised by photolithographic technique. Then at least one cavity is made in the dielectric substrate in order to place there a dielectric resonator. A dielectric resonator is fixed in each cavity and the dielectric substrate is placed into a case that fulfils the screen function.

EFFECT: improvement of filter producibility at preservation of high performance.

10 dwg

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RU 2 487 445 C1

Authors

Burdejnyj Mikhail Alekseevich

Dates

2013-07-10Published

2011-12-28Filed