MODE OF FABRICATION OF SEMICONDUCTOR SHF LIMITER DIODES BY GROUP METHOD Russian patent published in 2012 - IPC H01L21/329 

FIELD: electricity.

SUBSTANCE: mode of fabrication of semiconductor SHF limiter devices by group method involves the following operations: formation of an epitaxial low-doped semiconductor layer on a highly-doped semiconductor substrate, the substrate and the layer having the same conductivity type; the layer protection with a dielectric layer; formation of a grid of reference grooves in the semiconductor structure on the epitaxial layer side and to a depth exceeding the epitaxial layer thickness; creation of local contacts, a continuous metallisation layer a thick bearing copper coating; the substrate etch-stripping until exposure of the reference grooves grid on the reverse side; removal of the thick bearing copper layer and the resultant structure division into individual elements. Before formation of the reference grooves grid one creates in the epitaxial layer areas with a conductivity type opposite to that of the epitaxial layer; before removal of the thick bearing copper layer one applies metallisation layers onto the whole surface of the tightened substrate with subsequent formation of an integral heat sink of preset thickness. The resultant semiconductor structure is divided along the reference grooves using a diamond disc cutter.

EFFECT: allowable power dissipation level increase, provision for low losses during low-power signal forwarding.

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