FIELD: process engineering.
SUBSTANCE: invention allows a notable simplification of production of semiconductor devices for control over microwave power, particularly, of limiting p-i-n diode-based element. Proposed process of production of semiconductor p-i-n-structure devices for control over microwave power consists in uniform thinning of semiconductor plate central part. Pairs of local recesses with flat bottom at the area of mesa-structures are made on both sides of said central part. Isolated areas are doped on the plate both surfaces with acceptor and donor impurities. Beam leads are formed on the plate opposite sides with overlapping areas and paired mesa-structures of the devices are formed.
EFFECT: higher yield owing to simplified fabrication, sufficient quality of device parameters and their identity.
2 dwg
