MODULE OF POWER SEMICONDUCTOR ELEMENT WITH RESERVOIR FORMING PRESSURE PLATE Russian patent published in 2019 - IPC H01L23/367 

Abstract RU 2693521 C1

FIELD: electricity.

SUBSTANCE: invention can be used to create a power semiconductor element. Essence of invention consists in the fact that module of power semiconductor element for fixation on cooling body includes: at least one power semiconductor element; contacting means to electrically contact with said at least one power semiconductor element; made in at least separate areas of heat conducting clamping plate; prestressing means, which are designed to pre-strain the contacting means to the power semiconductor element for electrical contact, and power semiconductor element to said at least one heat-conducting region of said heat-conducting clamping plate made in at least separate regions in direction of cooling body for thermal contact; fastening means for securing the prestressing means on the cooling body, wherein the fasteners include the heat-conducting clamping plate made in at least separate regions, wherein said at least in separate areas the heat-conducting clamping plate forms at least one reservoir surrounding the power semiconductor, the filling mass is placed in the reservoir.

EFFECT: technical result: possibility of easy filling of module with filling mass.

11 cl, 5 dwg

Similar patents RU2693521C1

Title Year Author Number
SEMICONDUCTOR POWER MODULE WITH ENCLOSED SUBMODULES 1998
  • Shtokmajer Tomas
RU2210837C2
POWER SEMICONDUCTOR MODULE HAVING LAYERED SIDE WALLS 2009
  • Bil'Mann Markus
  • Blesh Kristof
  • Malipaard Dirk
  • Tsenker Andreas
RU2492548C2
PHASE MODULE FOR RECTIFIER 2016
  • Lorz, Roland
  • Sommer, Rainer
RU2679400C1
POWER SEMICONDUCTOR MODULE 2002
  • Bijlenga Bo
  • Tsvik Fabian
  • Linder Shtefan
  • Ehrne Patrik
RU2309482C2
SEMICONDUCTOR POWER MODULE 2000
  • Lang Tomas
  • Bukher Benno
  • Frej Toni
RU2243614C2
POWER SEMICONDUCTOR MODULE WITH IMPROVED STRUCTURE OF CONTACT CONNECTORS FOR WELDING 2016
  • Pelmer, Reimund
RU2676190C1
IMPROVED DISC CELL FOR SEVERAL SEMICONDUCTOR ELEMENTS CONTACTING THROUGH CLAMPING 2015
  • Schenk, Mario
  • Przybilla, Jens
  • Barthelmess, Reiner
  • Dorn, Jorg
RU2642117C1
NO-POTENTIAL POWER MODULE OF ENHANCED INSULATING VOLTAGE 2004
  • Bormotov Aleksej Timofeevich
  • Eliseev Vjacheslav Vasil'Evich
  • Martynenko Valentin Aleksandrovich
  • Muskatin'Ev Vjacheslav Gennad'Evich
  • Chibirkin Vladimir Vasil'Evich
RU2274928C2
CONVERTER AND POWER SUPPLY UNIT 2020
  • Molteni, Roberto
  • Mordeglia, Antonello
RU2801397C1
DEVICE FOR LIQUID COOLING OF THERMOELECTRIC GENERATOR 2022
  • Borodin Vladislav Ivanovich
  • Lun-Fu Aleksandr Viktorovich
  • Bubenchikov Mikhail Alekseevich
RU2801245C1

RU 2 693 521 C1

Authors

Nuebel Harald

Krause Elmar

Barthelmess Reiner

Dates

2019-07-03Published

2016-08-24Filed