THIN-FILM ELEMENT HAVING INTERFERENCE LAYER STRUCTURE Russian patent published in 2014 - IPC B42D15/00 

Abstract RU 2514589 C2

FIELD: physics.

SUBSTANCE: invention relates to a thin-film element (30) having an interference layer structure for security papers, value documents and the like, having at least two semitransparent absorber layers (34, 38) and at least one dielectric spacing layer (36) arranged between the at least two absorber layers. According to the present invention, each of the two absorber layers (34, 38) consists of material having a complex refraction index N whose real part n and imaginary part k differ at least in a portion of the visible spectral range by a factor of 5 or more.

EFFECT: improved protection.

23 cl, 8 dwg

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RU 2 514 589 C2

Authors

Fuhse Christian

Rahm Michael

Heim Manfred

Liebler Ralf

Dates

2014-04-27Published

2010-09-10Filed