FIELD: chemistry.
SUBSTANCE: method includes preparation of charge based on zinc selenide, its placing into reactor, vacuumisation to pressure 10-5-10-4 mm Hg, heating reactor evaporation zone to the temperature of evaporation, passing ZnSe vapour through filter with its following sedimentation on substrate which has the temperature lower than the evaporation temperature, and following cooling of reactor with half-finished product to room temperature; as charge applied is mixture of zinc selenide with elementary selenium with the following wt %: zinc selenide - 90-99, elementary selenium - 1-10, reactor evaporation zone is heated to the evaporation temperature of 1000-1200°C, cooling is carried out at rate 25-30°C/h.
EFFECT: invention makes it possible to obtain material with controlled stoichiometric ratio of elements and high optic quality of half-finished materials, which have low absorption in working range.
1 tbl
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0 |
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RU2619321C1 |
METHOD FOR PRODUCTION OF POLYCRYSTALLINE ZINC SELENIDE | 1991 |
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RU2031986C1 |
METHOD OF PREPARING POLYCRYSTALLINE BLOCKS AND FILM COATING BASED OF ZINC SULFIDE | 1994 |
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RU2077617C1 |
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Authors
Dates
2014-05-20—Published
2012-08-22—Filed