PROCESS OF MANUFACTURE OF SEMICONDUCTOR OPTOELECTRON DEVICES Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: eperaxial layer, layer of undoped solid solution of compound A³B⁵, layer of compound A³B⁵ of opposite type of conductance relative to first layer A³B⁵ and contact layer are precipitated in sequence on substrate A³B⁵, local ohmic contacts and barrier region to at least one of surface of structure as well as ohmic contacts to p- and n- regions of structure are formed. Barrier regions are formed from zinc selenide with specific resistance 10⁵-10¹⁰ Ohm.cm precipitated by method of vacuum-thermal sputtering at substrate temperature 70-400 C. EFFECT: decreased threshold current and enhanced differential quantum efficiency due to diminished leakage currents. 2 cl