LOW-VOLTAGE TEMPERATURE-STABLE AND RADIATION-RESISTANT SOURCE OF REFERENCE VOLTAGE Russian patent published in 2014 - IPC G05F3/00 

FIELD: electricity.

SUBSTANCE: device contains the first transistor which emitter is connected to the common bus, the first resistor coupled between the connection point of the base and a collector of the first transistor and the output of the device, the second resistor coupled between the device output and the common bus, the second transistor and third resistor, the first and second junction FETs, at that the third resistor is coupled between the base of the second transistor and the power supply bus, the collector of the second transistor is connected to the power supply bus, sources of the first and second junction FETS are united and coupled to the emitter of the second transistor, gates of the first and second junction FETs are connected to power supply bus, the source of the first junction FET is connected to the collector of the first transistor while the source of the second FET is connected to the device output.

EFFECT: simplification of scheme with high temperature stability of output voltage, its high radiation resistivity.

6 dwg